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| Infrared Light Emitting Diodes LN66F GaAs Infrared Light Emitting Diode Unit : mm For light source of remote control systems Features High-power output, high-efficiency : Ie = 13.0 mW/sr (min.) Emitted light spectrum suited for silicon photodetectors Narrow directivity : = 15 deg. (typ.) Transparent epoxy resin package 13.51.0 11.51.0 3.60.3 1.0 7.650.2 o5.00.2 Not soldered 2-1.00.15 2-0.60.15 2.54 0.60.15 2 1 1: Cathode 2: Anode o6.00.2 Absolute Maximum Ratings (Ta = 25C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP* VR Topr Tstg Ratings 75 50 1.5 3 -25 to +85 - 40 to +100 Unit mW mA A V C C f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25C) Parameter Radiant intensity at center Peak emission wavelength Spectral half band width Forward voltage (DC) Pulse forward voltage Reverse current (DC) Capacitance between pins Half-power angle * Symbol Ie P VF VFP IR Ct * Conditions IF = 50mA IF = 50mA IF = 50mA IF = 50mA IFP = 1.0A VR = 3V VR = 0V, f = 1MHz The angle in which radiant intencity is 50% min 13 1.0 typ 950 50 1.35 max Unit mW/sr nm nm 1.50 3.0 10 V V A pF deg. 20 15 f = 100 Hz, Duty cycle = 0.1 % 1 Infrared Light Emitting Diodes LN66F IF -- Ta 60 10 2 IFP -- Duty cycle tw = 10s Ta = 25C 80 70 IF -- VF Ta = 25C IF (mA) IFP (A) 50 IF (mA) Forward current 10 -1 1 10 10 2 10 60 50 40 30 20 10 Allowable forward current 40 Pulse forward current 1 30 10 -1 20 10 10 -2 0 - 25 0 20 40 60 80 100 10 -3 10 -2 0 0 0.4 0.8 1.2 1.6 Ambient temperature Ta (C ) Duty cycle (%) Forward voltage VF (V) Ie -- IFP 10 3 (1) tw = 10s f = 100Hz (2) DC Ta = 25C 1.6 VF -- Ta 10 Ie -- Ta IF = 50mA IF = 50mA Relative radiant intensity Ie VF (V) 10 2 (1) 10 1.2 10mA 0.8 Relative radiant intensity Ie Forward voltage 1 1 (2) 0.4 10 -1 10 -2 1 10 10 2 10 3 10 4 0 - 40 0 40 80 120 10 -1 - 40 0 40 80 120 Pulse forward current IFP (mA) Ambient temperature Ta (C ) Ambient temperature Ta (C ) P -- Ta 1000 IF = 50mA 100 Spectral characteristics IF = 50mA Ta = 25C Directivity characteristics 0 100 90 10 20 Peak emission wavelength P (nm) Relative radiant intensity (%) 980 80 80 70 Relative radiant intensity (%) 30 960 60 60 50 40 40 50 60 70 80 90 940 40 30 20 20 920 900 - 40 0 40 80 120 0 860 900 940 980 1020 1060 1100 Ambient temperature Ta (C ) Wavelength (nm) 2 LN66F Infrared Light Emitting Diodes Frequency characteristics 10 Ta = 25C 1 Modulation output 10 -1 10 -2 10 -3 10 10 2 10 3 10 4 Frequency f (kHz) 3 |
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